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| SEMICONDUCTOR TECHNICAL DATA Order this document by MRF314/D The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large-signal driver and output amplifier stages in the 30-200 MHz frequency range. * Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB * 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR * Gold Metallization System for High Reliability Applications MRF314 30 W, 30-200 MHz RF POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 35 65 4.0 3.4 82 0.47 -65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C CASE 211-07, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.13 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 30 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 30 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 30 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 3.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 35 65 65 4.0 -- -- -- -- -- -- -- -- -- -- 3.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 1.5 Adc, VCE = 5.0 Vdc) hFE 20 -- 80 -- NOTE: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) Cob -- 30 40 pF FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 30 W, f = 150 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 30 W, f = 150 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 30 W, f = 150 MHz, VSWR = 30:1 all phase angles) GPE No Degradation in Power Output 10 50 13.5 -- -- -- dB % R2 R1 RFC3 DC + 28 Vdc C8 RFC2 L1 C7 C9 C10 RF INPUT C1 Z2 Z1 DUT RF OUTPUT C2 C3 RFC1 C4 C5 C6 C1, C7 -- 18 pF, 100 mil ATC C2 -- 68 pF, 100 mil ATC C3, C6 -- Johanson #JMC 5501 C4 -- 270 pF, 100 mil ATC C5 -- 240 pF, 100 mil ATC C8, C9 -- 100 pF Underwood C10 -- 1.0 F Tantalum L1 -- 2 Turns, 2.5 #20 Wire, ID = 0.275 R1, R2 -- 10 , 1.0 W RFC1 -- 15 H Molded Coil RFC2 -- 2 Turns, 2.5 #20 Wire, ID = 0.2 RFC3 -- Ferroxcube VK200-19/4B Z1 -- Microstrip, 0.168 W x 1.6 L Z2 -- Microstrip, 0.168 W x 1.2 L Board -- Glass Teflon r = 2.55 Figure 1. 150 MHz Test Circuit 2 TYPICAL PERFORMANCE CURVES 55 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 45 35 f = 30 MHz 25 15 5 0.03 50 MHz 200 MHz 150 MHz 100 MHz 70 MHz VCC = 28 V 0.1 1 Pin, INPUT POWER (WATTS) 10 30 25 20 15 10 5 0.04 VCC = 13.5 V 0.1 1 Pin, INPUT POWER (WATTS) 6 f = 30 MHz 50 MHz 70 MHz 100 MHz 150 MHz 200 MHz Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power GPE , COMMON EMITTER POWER GAIN (dB) 24 22 20 18 16 14 12 10 20 40 60 80 100 120 140 160 180 200 220 20 40 60 80 100 120 140 160 180 200 220 VCC = 28 V Pout = 30 W , EFFICIENCY (%) 70 60 50 VCC = 28 V Pout = 30 W f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 4. Power Gain versus Frequency Figure 5. Efficiency versus Frequency 3 5.0 10.0 100 0 50 30 70 Zin 5.0 150 f = 200 MHz 5.0 15.0 20.0 Pout = 30 W, VCC = 28 V Zin OHMS 2.4 - j3.4 1.6 - j2.6 0.8 - j0.8 0.7 - j0.5 0.9 + j0.9 1.3 + j1.2 ZOL* OHMS 18.0 - j12.1 16.5 - j12.1 15.0 - j11.8 12.9 - j10.8 11.9 - j9.4 11.5 - j8.1 10.0 f MHz 30 50 70 100 150 200 f = 200 MHz 150 100 ZOL* 70 50 30 15.0 20.0 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 6. Series Equivalent Input/Output Impedance 4 PACKAGE DIMENSIONS A U M Q 1 4 M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K M Q R S U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.370 0.390 0.229 0.281 0.215 0.235 0.085 0.105 0.150 0.108 0.004 0.006 0.395 0.405 40 _ 50 _ 0.113 0.130 0.245 0.255 0.790 0.810 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 9.40 9.90 5.82 7.13 5.47 5.96 2.16 2.66 3.81 4.57 0.11 0.15 10.04 10.28 40 _ 50 _ 2.88 3.30 6.23 6.47 20.07 20.57 18.29 18.54 R 2 3 B S D K J H C E SEATING PLANE EMITTER BASE EMITTER COLLECTOR CASE 211-07 ISSUE N Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 5 |
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